New considerations for highly reliable PMOSFETs in 100 nm generation and beyond

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue TECHNOLOGY SYMP., 2001, Pages 117-118

  Morifuji, E ^a   Kumamori, T ^a   Muta, M ^a   Suzuki, K ^a   De, I ^a   Shibkov, A ^a   Saxena, S ^a   Enda, T ^a   Aoki, N ^a   Asano, W ^a   Otani, H ^a   Nishigori, M ^a   Miyamoto, K ^a   Matsuoka, F ^a   Noguchi, T ^a   Kakumu, M ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DEGRADATION; HOT CARRIERS; RELIABILITY; STRESS ANALYSIS; THERMAL EFFECTS;

HOT-CARRIER (HC) INJECTION;

MOSFET DEVICES;

EID: 0034784980     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)