Mechanism of dynamic negative bias temperature instability of p-MOSFETs with 13 å oxynitride gate dielectric

Electrochemical and Solid-State Letters

Volumn 8, Issue 12, 2005, Pages

  Pan, Tung Ming ^a   Liu, Chuan Hsi ^b  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b MING CHUAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; MATHEMATICAL MODELS; THRESHOLD VOLTAGE;

DYNAMIC NEGATIVE BIAS TEMPERATURE INSTABILITY; OXYNITRIDE GATE DIELECTRIC; THRESHOLD VOLTAGE SHIFT;

MOSFET DEVICES;

EID: 28044457659     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2109287     Document Type: Article

References (21)

1. D. K. Schroder and J. A. Babcock, J. Appl. Phys., 94, 1 (2003).
2. K. Kushida-Abdelghafar, K. Watanabe, J. Ushio, and E. Murakami, Appl. Phys. Lett., 81, 4362 (2002).
3. N. Kimizuka, T. Yamamoto, T. Mogami, K. Yamaguchi, K. Imai, and T. Horiuchi, in IEEE VLSI Symposium Proceedings, 1999, p. 73.
4. A. Raychaudhuri, M. J. Deen, W. S. Kwan, and M. I. H. King, IEEE Trans. Electron Devices, 43, 1114 (1996).
5. E. Morifuji, T. Kumamori, M. Muta, K. Suzuki, I. De, A. Shibkov, S. Saxena, T. Enda, N. Aoki, W. Asano, H. Otani, M. Nishigori, K. Miyamoto, F. Matsuoka, T. Noguhi, and M. Kakumu, in IEEE VLSI Symposium Proceedings, 2001, p. 117.
6. A. Ono, K. Fukasaku, T. Hirai, M. Makabe, S. Koyama, N. Ikezawa, K. Ando, T. Suzuki, K. Imai, and N. Nakamura, in IEEE VLSI Symposium Proceedings, 2001, p. 79.
7. T. B. Hook, E. Adler, F. Guarin, J. Lukaitis, N. Rovedo, and K. Schruefer, IEEE Trans. Electron Devices, 48, 1346 (2001).
8. V. Reddy, A. T. Krishnan, A. Marshall, J. Rodriguez, S. Natarajan, T. Rost, and S. Krishnan, in IEEE IRPS Symposium Proceedings, 2002, p. 248.
9. M. Ershov, S. Saxena, H. Karbasi, S. Winters, S. Minehane, J. Babcock, R. Lindley, P. Clifton, M. Redford, and A. Shibkov, Appl. Phys. Lett., 83, 1647 (2003).
10. V. Huard and M. Denais, in IEEE IRPS Symposium Proceedings, 2004, p. 40.
11. G. Chen, K. Y. Chuah, M. F. Li, D. S. Chan, C. H. Ang, J. Z. Zheng, Y. Jin, and D. L. Kwong, in IEEE IRPS Symposium Proceedings, 2004, p. 196.
12. W. Abadeer and W. Ellis, in IEEE IRPS Symposium Proceedings, 2003, p. 17.
13. M. A. Alam, Tech. Dig. - Int. Electron Devices Meet., 2003, 17.
14. G. Chen, K. Y. Chuan, M. F. Li, D. S. Chan, C. H. Ang, J. Z. Zheng, Y. Jin, and D. L. Kwong, in IEEE IRPS Symposium Proceedings, 2003, p. 196.
15. S. S. Tan, T. P. Chen, J. M. Soon, K. P. Loh, C. H. Ang, and L. Chan, Appl. Phys. Lett., 82, 1881 (2003).
16. M. Houssa, C. Parthasarathy, N. Espreux, J. L. Autran, and N. Revilb, Electrochem. Solid-State Lett., 6, G146 (2003).
17. S. Ogawa and N. Shiono, Phys. Rev. B, 51, 4218 (1995).
18. S. Ogawa, M. Shimaya, and N. Shiono, J. Appl. Phys., 77, 1137 (1995).
19. M. Houssa, M. Aoulaiche, S. D. Gendt, G. Groeseneken, and M. M. Heyns, Appl. Phys. Lett., 86, 093506 (2005).
20. C. T. Sah, J. Y. Sun, and J. J. T. Tzou, J. Appl. Phys., 55, 1525 (1984).
21. T. Yamamoto, K. Uwasawa, and T. Mogami, IEEE Trans. Electron Devices, 46, 921 (1999).