Surface morphologies of AlGaN films and AlGaN/GaN heterostructures on vicinal sapphire (0001) substrates grown by rf-MBE

Institute of Physics Conference Series

Volumn 184, Issue , 2005, Pages 231-234

  Shen, X Q ^a   Kawakami, Y ^a   Okumura, H ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRACKS; ELECTRONIC EQUIPMENT; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SEMICONDUCTING ALUMINUM COMPOUNDS;

MICRO-CRACKS;

THIN FILMS;

EID: 33644550938     PISSN: 09513248     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

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2. Yamaguchi S, Kosaki M, Watanabe Y, Yukawa Y, Nitta S, Amano H and Akasaki I 2001 Appl. Phys Lett. 79 3062
3. Yasan A, McClintock R, Mayesb K, Darvish S R, Kung P and Razeghi M 2002 Appl. Phys Lett. 81 801
4. Hanlon A, Pattison P M, Kaeding J F, Sharma R, Fini P and Nakamura S 2003 Jpn. J. Appl. Phys. 42 L628
5. Shen X Q, Shimizu M and Okumura H 2003 Jpn. J. Appl. Phys. 42 L1293