-
3
-
-
0028550702
-
Sol-gel method for synthesizing visible photoluminescent nanosized Ge-crystal-doped silica glasses
-
Nogami M., and Abe Y. Sol-gel method for synthesizing visible photoluminescent nanosized Ge-crystal-doped silica glasses. Appl Phys Lett 65 (1994) 2545-2547
-
(1994)
Appl Phys Lett
, vol.65
, pp. 2545-2547
-
-
Nogami, M.1
Abe, Y.2
-
7
-
-
0002546762
-
Blue photo- and electroluminescence of silicon dioxide layers ion-implanted with group IV elements
-
Rebohle L., Borany J., Frob H., and Skorupa W. Blue photo- and electroluminescence of silicon dioxide layers ion-implanted with group IV elements. Appl Phys B 71 (2000) 131-151
-
(2000)
Appl Phys B
, vol.71
, pp. 131-151
-
-
Rebohle, L.1
Borany, J.2
Frob, H.3
Skorupa, W.4
-
10
-
-
0000572713
-
Photoluminescence in high-quality a-Ge:H
-
Ishii S., Kurihara M., Aoki T., Shimakawa K., and Singh J. Photoluminescence in high-quality a-Ge:H. J Non-Cryst Solids 266-269 (2000) 721-725
-
(2000)
J Non-Cryst Solids
, vol.266-269
, pp. 721-725
-
-
Ishii, S.1
Kurihara, M.2
Aoki, T.3
Shimakawa, K.4
Singh, J.5
-
11
-
-
0038212798
-
Electroluminescence form hydrogenated amorphous silicon p-i-n diodes
-
Han D., and Wang K. Electroluminescence form hydrogenated amorphous silicon p-i-n diodes. J Non-Cryst Solids 190 (1995) 74-84
-
(1995)
J Non-Cryst Solids
, vol.190
, pp. 74-84
-
-
Han, D.1
Wang, K.2
-
12
-
-
0037153518
-
2-isolated visible amorphous thin-film LED fabricated on crystalline silicon substrate
-
2-isolated visible amorphous thin-film LED fabricated on crystalline silicon substrate. IEE Electron Lett 38 24 (2002) 1580-1581
-
(2002)
IEE Electron Lett
, vol.38
, Issue.24
, pp. 1580-1581
-
-
Yeh, R.H.1
Lin, C.S.2
Liu, W.H.3
Hong, J.W.4
-
14
-
-
0032680420
-
Characteristics of SiC-based thin-film LED fabricated using plasma-enhanced CVD system with stainless steel mesh
-
Chen Y.A., Hsu M.L., Laih L.H., Hong J.W., and Chang C.Y. Characteristics of SiC-based thin-film LED fabricated using plasma-enhanced CVD system with stainless steel mesh. IEE Electron Lett 35 15 (1999) 1274-1275
-
(1999)
IEE Electron Lett
, vol.35
, Issue.15
, pp. 1274-1275
-
-
Chen, Y.A.1
Hsu, M.L.2
Laih, L.H.3
Hong, J.W.4
Chang, C.Y.5
-
16
-
-
11944266974
-
Hydrogen interactions with defects in crystalline solids
-
Baskes M.I., Birnbaum H.K., Corbett J.W., Deleo G.G., Estreicher S.K., Haller E.E., et al. Hydrogen interactions with defects in crystalline solids. Rev Mod Phys 64 2 (1992) 559-617
-
(1992)
Rev Mod Phys
, vol.64
, Issue.2
, pp. 559-617
-
-
Baskes, M.I.1
Birnbaum, H.K.2
Corbett, J.W.3
Deleo, G.G.4
Estreicher, S.K.5
Haller, E.E.6
-
17
-
-
0029543652
-
Hydrogen passivation effects on performance of visible thin-film light-emitting diodes (TFLEDs)
-
Lee J.W., Hur S.H., and Lim K.S. Hydrogen passivation effects on performance of visible thin-film light-emitting diodes (TFLEDs). IEDM (1995) 825-828
-
(1995)
IEDM
, pp. 825-828
-
-
Lee, J.W.1
Hur, S.H.2
Lim, K.S.3
-
18
-
-
4243109277
-
Hydrogenated amorphous silicon/aluminum interaction at low temperature
-
Haque M.S., Naseem H.A., Brown W.D., and Ang S.S. Hydrogenated amorphous silicon/aluminum interaction at low temperature. Mat Res Soc Symp Proc 258 (1992) 1037-1042
-
(1992)
Mat Res Soc Symp Proc
, vol.258
, pp. 1037-1042
-
-
Haque, M.S.1
Naseem, H.A.2
Brown, W.D.3
Ang, S.S.4
-
19
-
-
0024048648
-
Carrier injection mechanism in an a-SiC p-i-n junction thin film LED
-
Kruangam D., Deguchi M., Toyama T., Okamoto H., and Hamakawa Y. Carrier injection mechanism in an a-SiC p-i-n junction thin film LED. IEEE Trans Electron Dev 35 (1988) 957-964
-
(1988)
IEEE Trans Electron Dev
, vol.35
, pp. 957-964
-
-
Kruangam, D.1
Deguchi, M.2
Toyama, T.3
Okamoto, H.4
Hamakawa, Y.5
-
20
-
-
2942558747
-
Properties of a-Si:H TFTs using silicon carbonitride as dielectric
-
Lavareda G., Nunes C., Fortunato E., Amaral A., and Ramos A.R. Properties of a-Si:H TFTs using silicon carbonitride as dielectric. J Non-Cryst Sol 338-40 (2004) 797-801
-
(2004)
J Non-Cryst Sol
, vol.338-40
, pp. 797-801
-
-
Lavareda, G.1
Nunes, C.2
Fortunato, E.3
Amaral, A.4
Ramos, A.R.5
-
21
-
-
0024908807
-
Amorphous-SiC thin-film p-i-n light-emitting diode using amorphous-SiN hot-carrier tunneling injection layers
-
Paasche S.M., Toyama T., Okamoto H., and Hamakawa Y. Amorphous-SiC thin-film p-i-n light-emitting diode using amorphous-SiN hot-carrier tunneling injection layers. IEEE Trans Electron Dev 36 (1989) 2895-2902
-
(1989)
IEEE Trans Electron Dev
, vol.36
, pp. 2895-2902
-
-
Paasche, S.M.1
Toyama, T.2
Okamoto, H.3
Hamakawa, Y.4
-
22
-
-
0031100507
-
Wide band gap amorphous silicon-based alloys
-
Giorgis F., Pirri C.F., Tresso E., Rigato V., Zandolin S., and Rava P. Wide band gap amorphous silicon-based alloys. Phys B B229 (1997) 233-239
-
(1997)
Phys B
, vol.B229
, pp. 233-239
-
-
Giorgis, F.1
Pirri, C.F.2
Tresso, E.3
Rigato, V.4
Zandolin, S.5
Rava, P.6
|