Porous silicon n-p light emitting diode

Thin Solid Films

Volumn 297, Issue 1-2, 1997, Pages 272-276

  Pavesi, L ^a   Guardini, R ^a   Bellutti, P ^b  

^a UNIVERSITY OF TRENTO   (Italy)

^b ITC IRST   (Italy)

Author keywords

Light emitting diode; Porous silicon

Indexed keywords

ANODIC OXIDATION; ELECTROCHEMISTRY; ELECTROLUMINESCENCE; MECHANICAL PROPERTIES; POROUS SILICON; SILICON WAFERS; STABILITY;

POST PROCESSING ELECTROCHEMICAL ANODIZATION; THERMAL SINK;

LIGHT EMITTING DIODES;

EID: 0031121308     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09415-1     Document Type: Article

References (6)

1. L. Canham, Phys. World (March 1992) 41.
2. W. Lang, P. Steiner and F. Kozlowski, J. Lumin., 57 (1993) 341.
3. A. Loni, A.J. Simons, T.I. Cox, P.D.J. Calcott and L.T. Canham, Electron. Lett., 15 (1995) 1288.
4. J. Linnros and N. Lalic, Appl. Phys. Lett., 66 (1995) 3048.
5. L. Pavesi, M. Ceschini, G.Mariotto, E. Zanghellini, O. Bisi, M. Anderle, L. Calliari, M. Fedrizzi and L. Fedrizzi, J. Appl. Phys., 75 (1994) 1118.
6. M. Ben-Chorin, F. Möller and F. Koch, Phys. Rev. B, 49 (1994) 2981.