Optoelectronic characteristics of a-SiC:H-Based P-I-N thin-film light-emitting diodes with low-resistance and high-reflectance N+-a-SiCGe:H layer

IEEE Transactions on Electron Devices

Volumn 44, Issue 9, 1997, Pages 1360-1366

  Chen, Yen Ann ^a,b   Chiou, Chen Fu ^a   Tsay, Wen Chin ^b   Laih, Li Hong ^a,b   Hong, Jyh Wong ^a,b   Chang, Chun Yen ^a,b  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; ANNEALING; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; THIN FILMS;

THIN FILM LIGHT EMITTING DIODES (TFLED);

LIGHT EMITTING DIODES;

EID: 0031234997     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.622587     Document Type: Article

References (18)

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