Characteristics of SiC-based thin-film LED fabricated using plasma-enhanced CVD system with stainless steel mesh

Electronics Letters

Volumn 35, Issue 15, 1999, Pages 1274-1275

  Chen, Yen Ann ^a   Hsu, Ming Lung ^a   Laih, Li Hong ^a   Hong, Jyh Wong ^a   Chang, Chun Yen ^b  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CURRENT DENSITY; ELECTRODES; ELECTROLUMINESCENCE; FABRICATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCHOTTKY BARRIER DIODES; STAINLESS STEEL; THIN FILMS; THRESHOLD VOLTAGE;

HYDROGENATED AMORPHOUS SILICON; STAINLESS STEEL MESH;

LIGHT EMITTING DIODES;

EID: 0032680420     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990786     Document Type: Article

References (9)

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