SiO2-isolated visible amorphous thin-film LED fabricated on crystalline silicon substrate

Electronics Letters

Volumn 38, Issue 24, 2002, Pages 1580-1581

  Yeh, Rong Hwei ^a   Lin, Cha Shin ^a   Liu, Wen Hsiung ^a   Hong, Jyh Wong ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CURRENT DENSITY; ELECTROLUMINESCENCE; INTEGRATED OPTOELECTRONICS; OPTICAL PROPERTIES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES; THIN FILM DEVICES;

BRIGHTNESS; CRYSTALLINE SILICON; THIN FILM LIGHT EMITTING DIODES;

LIGHT EMITTING DIODES;

EID: 0037153518     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20021028     Document Type: Article

References (10)

1. KOSHIDA, N., and KOYAMA, H.: 'Visible electroluminescence from porous silicon', Appl. Phys. Lett., 1992, 60, (3), pp 347-349
2. x nanoparticles synthesized by laser ablation', Appl. Phys. Lett., 1998, 73, (4), pp. 438-440
3. MATSUOKA, M., and TOHNO, S.: 'Electroluminescence of erbium-doped silicon films as grown by ion beam epitaxy', Appl. Phys. Lett., 1997, 71, (1), pp 96-98
4. GARTER, M., et al.: 'Visible and infrared rare-earth-activated electroluminescence from indium tin oxide Schottky diodes to GaN:Er on Si', Appl. Phys. Lett., 1999, 74, (2), pp. 182-184
5. LIU, C.W., et al.: 'Room-temperature electroluminescence from electronhole plasmas in the metal-oxide-silicon tunneling diodes', Appl. Phys. Lett., 2000, 76, (12), pp. 1516-1518
6. +-a-SiCGe:H layer', IEEE Trans. Electron Devices, 1997, 44, (9), pp. 1360-1366
7. BOONKSUUM, W., KRUANGAM, D., and PANYKEOW, S.: 'Visible-light amorphous silicon-nitride thin-film emitting diode', Mat. Res. Soc. Symp. Proc., 1993, 1993, 297, pp. 1005-1010
8. CHEN, Y.A., et al.: 'Characteristics of SiC-based thin-film LED fabricated using plasma-enhanced CVD system with stainless steel mesh', Electron. Lett., 1999, 35, (15), pp. 1274-1275
9. MATSUURA, H., et al.: 'Electrical properties of n-amorphous/p-crystalline silicon heterojunction', J. Appl. Phys., 1984, 55, (4), pp. 1012-1019
10. KRUANGAM, D., et al.: 'Carrier injection mechanism in a-SiC:H p-i-n junction thin-film LED', IEEE Trans. Electron Devices, 1988, 35, (7), pp. 987-965