Quantitative two-dimensional carrier profiling of a 400 nm complementary metal-oxide-semiconductor device by Schottky scanning capacitance microscopy

Journal of Applied Physics

Volumn 88, Issue 11, 2000, Pages 6752-6757

  Tran, T ^a   Nxumalo, J N ^a,b   Li, Y ^a,c   Thomson, D J ^a   Bridges, G E ^a   Oliver, D R ^a  

^a UNIVERSITY OF MANITOBA   (Canada)

^b Chipworks   (Canada)

^c NORTEL NETWORKS   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001084217     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1322380     Document Type: Article

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