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MRS Internet Journal of Nitride Semiconductor Research

Volumn 10, Issue , 2005, Pages 1-9

Core-level photoemission from stoichiometric GaN(0001)-1×1

(6) Widstrand, S M a Magnusson, K O a Johansson, L S O a Moons, E a Gurnett, M a Oshima, M b

a KARLSTAD UNIVERSITY (Sweden)

b UNIVERSITY OF TOKYO (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; CHEMICAL BONDS; LIGHT EMISSION; STOICHIOMETRY; X RAY PHOTOELECTRON SPECTROSCOPY;

BINDING ENERGY SHIFTS; GA OVERLAYERS; STOICHIOMETRIC SURFACE;

GALLIUM NITRIDE;

EID: 33750233119 PISSN: 10925783 EISSN: 10925783 Source Type: Journal
DOI: 10.1557/s1092578300000521 Document Type: Article

Times cited : (14)

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