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EPJ Applied Physics

Volumn 27, Issue 1-3, 2004, Pages 49-54

Strain mapping in deep sub-micron Si devices by convergent beam electron diffraction in the STEM

(3) Armigliato, A a Balboni, R a Frabboni, S b

a CNR (Italy)

b UNIVERSITY OF MODENA AND REGGIO EMILIA (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUUM MECHANICS; ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICES; STRAIN; TRANSMISSION ELECTRON MICROSCOPY; TWO DIMENSIONAL;

CONVERGENT-BEAM ELECTRON DIFFRACTION (CBED); NANODIFFRACTION; SCANNING TRANSMISSION ELECTRON MICROSCOPY (STEM); SELECTED-AREA ELECTRON DIFFRACTION;

SILICON;

EID: 10244244879 PISSN: 12860042 EISSN: None Source Type: Journal
DOI: 10.1051/epjap:2004132 Document Type: Conference Paper

Times cited : (5)

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