Strain analysis of Si by FEM and energy-filtering CBED

Microscopy and Microanalysis

Volumn 8, Issue 1, 2002, Pages 11-15

  Okuyama, Tetsuya ^a   Nakayama, Masaru ^a   Tomokiyo, Yoshitsugu ^b   Van Der Biest, Omer ^c  

^a KURUME NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b KYUSHU UNIVERSITY   (Japan)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

CBED; Convergent beam electron diffraction; CZ Si; Energy filtering; FEM; Field emission TEM; Finite element method; HOLZ pattern; Lattice strain; Oxygen precipitate

Indexed keywords

SILICON;

CONFERENCE PAPER; CRYSTALLOGRAPHY; ELECTRON MICROSCOPY; EVALUATION; METHODOLOGY; RADIATION SCATTERING; SEMICONDUCTOR;

CRYSTALLOGRAPHY; MICROSCOPY, ELECTRON; SCATTERING, RADIATION; SEMICONDUCTORS; SILICON;

EID: 0036341396     PISSN: 14319276     EISSN: None     Source Type: Journal    
DOI: 10.1017/s1431927602010036     Document Type: Conference Paper

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