Influence of electrostatic confinement on optical gain in GaInNAs quantum-well lasers

IEEE Journal of Quantum Electronics

Volumn 42, Issue 6, 2006, Pages 608-615

  Healy, Sorcha B ^a   O'Reilly, Eoin P ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

Dilute nitrides; Gainnas; Quantum wells (qws); Schr dinger poisson; Semiconductor lasers

Indexed keywords

AUGER RECOMBINATION; DILUTE NITRIDES; ELECTROSTATIC ATTRACTIONS; ELECTROSTATIC CONFINEMENT; EXPERIMENTAL STUDIES; GAAS; GAINNAS; HEAVY HOLES; HOLE LEAKAGE; MONOMOLECULAR RECOMBINATION; POISSON SOLVERS; QUANTUM WELL; QUANTUM WELLS (QWS); ROOM TEMPERATURE; TEMPERATURE SENSITIVITY; TEN-BAND K.P HAMILTONIAN; VALENCE BAND OFFSETS;

ELECTROSTATICS; GALLIUM NITRIDE; LASERS; OPTICAL GAIN; SEMICONDUCTOR QUANTUM WELLS;

QUANTUM WELL LASERS;

EID: 33750029248     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2006.874066     Document Type: Article

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