A universal model for trends in A1 -type defect states in zincblende and diamond semiconductor structures

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 434-439

  Lindsay, A ^a   O'Reilly, E P ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

Band anti crossing model; Dilute nitrides; Tight binding method

Indexed keywords

CRYSTAL IMPURITIES; CRYSTAL LATTICES; ELECTRON ENERGY LEVELS; ENERGY GAP; LATTICE CONSTANTS; SEMICONDUCTING DIAMONDS; SEMICONDUCTING GALLIUM ARSENIDE;

BAND ANTICROSSING MODEL; CONDUCTION BAND EDGE (CBE); TIGHT BINDING METHOD;

CRYSTAL DEFECTS;

EID: 0347316560     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.033     Document Type: Conference Paper

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