Fabrication and characterization of in situ-doped a-Si0.8C0.2 emitter bipolar transistors

Solid-State Electronics

Volumn 44, Issue 9, 2000, Pages 1543-1548

  Orpella, A ^a   Puigdollers, J ^a   Bardes D ^a   Alcubilla, R ^a   Marsal, L F ^b   Pallares J ^b  

^a UNIVERSITAT POLITÈCNICA DE CATALUNYA   (Spain)

^b UNIVERSITAT ROVIRA I VIRGILI   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; DIFFUSION IN SOLIDS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

SILICON-CARBON EMITTERS;

BIPOLAR TRANSISTORS;

EID: 0034275271     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00121-0     Document Type: Article

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