Circuit simulator models for the diode and IGBT with full temperature dependent features

PESC Record - IEEE Annual Power Electronics Specialists Conference

Volumn 4, Issue , 2001, Pages 2171-2177

  Palmer, P R ^a   Joyce, J C ^a   Eng, P Y ^a   Hudgins, J ^a,b   Santi, E ^a,b   Dougal, R ^a,b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b University of South Carolina   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE DYNAMICS; CIRCUIT SIMULATION;

BOUNDARY CONDITIONS; COMPUTER SOFTWARE; CONVERGENCE OF NUMERICAL METHODS; ELECTRIC CHARGE; ELECTRIC CONDUCTIVITY; FINITE DIFFERENCE METHOD; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DIODES;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 0034795058     PISSN: 02759306     EISSN: None     Source Type: Journal    
DOI: 10.1109/PESC.2001.954442     Document Type: Article

References (10)

1. Status and trends of power semiconductor device models for circuit simulation
2. A PSPICE model of the DG-EST based on the ambipolar diffusion equation
3. Bipolar semiconductor device models for computer-aided design in power electronics
4. On the effective carrier lifetime in p-s-n rectifiers at high injection levels
5. A modelling approach for dual mode thyristor devices
6. Choosing a thermal model for electrothermal simulation of power semiconductor devices
7. Behaviour of IGBT modules under short circuit conditions
8. A study of distributed switching processes in IGBTs and other power bipolar devices
9. Analysis and modelling of the technology dependent electrothermal IGBT characteristics