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Volumn 2, Issue , 2003, Pages 1012-1019

Design, Test And Characteristics of 10 kV IGCTs

Author keywords

[No Author keywords available]

Indexed keywords

DIODES; GATES (TRANSISTOR); PULSE WIDTH MODULATION; SWITCHING;

EID: 0242508296     PISSN: 01972618     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (21)

References (7)
  • 2
    • 0036054221 scopus 로고    scopus 로고
    • 10kV power semiconductors - Breakthrough for 6.9 kV Medium Voltage Drives
    • Santa Fe
    • S. Eicher, A. Weber, 10kV power semiconductors - breakthrough for 6.9 kV Medium Voltage Drives, IEEE-ISPSD 2001, Santa Fe
    • (2001) IEEE-ISPSD 2001
    • Eicher, S.1    Weber, A.2
  • 7
    • 0033336476 scopus 로고    scopus 로고
    • A reliable, Interface friendly Medium Voltage Drive based on the robust IGCT and DTC technologies
    • Poenix
    • P. K. Steimer, J. K.Steinke, H. E. Grüning, A reliable, Interface friendly Medium Voltage Drive based on the robust IGCT and DTC technologies IEEE IAS Annual Meeting 1999, Poenix, pp. 1505-1512
    • (1999) IEEE IAS Annual Meeting 1999 , pp. 1505-1512
    • Steimer, P.K.1    Steinke, J.K.2    Grüning, H.E.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.