Growth of InAs on micro- and nano-scale patterned GaAs(001) substrates by molecular beam epitaxy

Nanotechnology

Volumn 17, Issue 20, 2006, Pages 5278-5281

  Liu, H F ^a   Xiang, N ^a   Chua, S J ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION NETWORKS; NANO-SCALE PATTERNED SUBSTRATES; PATTERNED SUBSTRATES; STRAIN RELAXATION;

DISLOCATIONS (CRYSTALS); LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION ANALYSIS;

NANOSTRUCTURED MATERIALS;

EID: 33749532871     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/20/039     Document Type: Article

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