Triclinic deformation and anisotropic strain relaxation of an InAs film on a GaAs(0 0 1) substrate measured by a series of symmetric double crystal X-ray diffraction

Journal of Crystal Growth

Volumn 191, Issue 4, 1998, Pages 627-630

  Wang, Hongmei ^a   Zeng, Yiping ^a   Zhou, Hongwei ^a   Kong, Meiying ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CRYSTAL ORIENTATION; CRYSTAL SYMMETRY; DISLOCATIONS (CRYSTALS); LATTICE CONSTANTS; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; X RAY CRYSTALLOGRAPHY;

DOUBLE CRYSTAL X-RAY DIFFRACTION; FULL-WIDTH AT HALF-MAXIMUM (FWHM); STRAIN RELAXATION; TRICLINIC DEFORMATION;

SEMICONDUCTING FILMS;

EID: 0032136248     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00381-9     Document Type: Article

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