Site-controlled InAs quantum dots regrown on nonlithographically patterned GaAs

Applied Physics Letters

Volumn 86, Issue 15, 2005, Pages 1-3

  Meneou, K ^a   Cheng, K Y ^a   Zhang, Z H ^a   Tsai, C L ^a   Xu, C F ^a   Hsieh, K C ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROCHEMICAL ETCHING; NANOCHANNEL ALUMINA (NCA); NONLITHOGRAPHIC METHOD; QUANTUM-SIZE EFFECTS;

ALUMINA; ELECTROCHEMISTRY; ELECTROOPTICAL DEVICES; ETCHING; PHOTOLITHOGRAPHY; PHOTOLUMINESCENCE; POROSITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 20844456376     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1900942     Document Type: Article

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