A 90W S-band high power amplifier for broadband wireless applications

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2003, Pages 73-76

  Matsunaga, Kohji ^a   Shimawaki, Hidenori ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC LINES; INTERMODULATION;

BROADBAND WIRELESS;

POWER AMPLIFIERS;

EID: 0043166654     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. G.Sarkissian, et.al, "A S-BAND PUSH-PULL 60-WATT GaAs MESFET FOR MMDS APPLICATIONS," 1997 IEEE MTT-S Int. Microwave Symp. Dig., pp. 1409-1412, June 1997.
2. M.Miller, et.al, "A Power PHEMT Device Technology for Broadband Wireless Access," 2007 IEEE MTT-S Int. Microwave Symp. Dig., pp. 637-640, June 2001.
3. H.Ishida, et.al, "200W GaAs-Based MODFET Power Amplifier for W-CDMA Base Station," 1999 IEDM Technical Digest, pp.405-408, pp.393-396.
4. K.Ebihara, et.al, "An Ultra Broad Band 300W GaAs Power FET for W-CDMA Base Stations," 2007 IEEE MTT-S Int. Microwave Symp. Dig., pp. 649-652, June 2001.
5. I.Takenaka, et.al, "A 240W Power Heterojunction FET with High Efficiency for W-CDMA Base Station, " 2001 IEEE MTT-S Int. Microwave Symp. Dig., pp. 645-648, June 2001.
6. K.Matsunaga, et.al, "A Low-Distortion 230W GaAs Power FP-FET Operated at 22V for Cellular Base Station," 2000 IEDM Technical Digest, pp.59-62.
7. T.Yamamoto, et.al, "A 6GHz, 50Watt Low Distortion Push-Pull GaAs Power FET Optimized for 12V Class A-B Operation," 2001 IEEE MTT-S Int. Microwave Symp. Dig., pp. 1055-1058, June 2001.
8. Fujitsu Quantum Devices Ltd., Microwave Products 2002.
9. Toshiba Corporation, Microwave Products 2002.