C-band GaAs FET power amplifiers with 70-W output power and 50% PAE for satellite communication use

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2004, Pages 57-60

  Wakejima, A ^a   Matsunaga, K ^a   Asano, T ^a   Hirano, T ^a   Funabashi, M ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

OUTPUT MATCHING CIRCUITS; OUTPUT POWER; SATELLITE COMMUNICATION USE; SINGLE-END POWER AMPLIFIERS;

ELECTRIC DISTORTION; ELECTRIC POTENTIAL; ELECTRONICS PACKAGING; INTERMODULATION; MICROPROCESSOR CHIPS; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM ARSENIDE;

SATELLITE COMMUNICATION SYSTEMS;

EID: 21644465253     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2004.1392485     Document Type: Conference Paper

References (5)

1. H. Otsuka, K. Mori, H. Yukawa, H. Minamide, Y. Kittaka, T. Tsunoda, S. Ogura, Y. Ikeda, and T. Takagi, "Over 65% efficiency 300 MHz bandwidth C-band internally-matched GaAs FET designed with a large-signal FET model, " 2004 IEEE MTT-S Int. Microwave Symp. Dig., pp. 521-524.
2. H. Minamide, M. Kohno, N. Yoshida, K. Yajima, K. Mori, T. Ogawa, and T. Sonoda, "70% High efficient C-bnad 27 W hetero-structure FET for space application" 2002 IEEE MTT-S Int. Microwave Symp. Dig., pp. 621-623.
3. A. Darbandi M. Zoyo, J. Y. Touchais, and H. Leveque, "25 W C-band highly efficient on board hybrid amplifier," 2002 European Microwave Cong. Dig., p. 295.
4. Microwave Products TIM4450-60SL, Toshiba Corporation.
5. Microwave/RF Products MGFC47A4450, Mitsubishi Electric.