A 5.5GHz, 25W GaAs power-FET chip at 26V operation

Conference Proceedings- European Microwave Conference

Volumn 3, Issue , 2004, Pages 1313-1316

  Yamamoto, T ^a   Inoue, K ^a   Igarashi, T ^a   Sano, S ^a   Takase, S ^a  

^a Sumitomo Electric Device Innovations USA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CAPACITANCE; ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS; GALLIUM COMPOUNDS; OPTIMIZATION; SHOT NOISE; TELECOMMUNICATION;

26V OPERATION; GATE CAPACITANCE; MATCHING CIRCUIT LOSSES; POWER-FET CHIP;

CHIP SCALE PACKAGES;

EID: 18844428083     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. K.Asano, Y.Miyoshi, K.Ishikura, Y.Nashimoto, M.Kuzuhara and M.Mizuta "Novel High Power AlGaAs/GaAs HFET with a Field-Modulating Plate Operated at 35V Drain Voltage", 1998 IEDM Technical Digest, pp.59-62.
2. K. Matsugana, K. Ishikura, I. Takenaka, W. Contrata, A. Wakejima, K. Ota, M. Kanamori and M. Kuzuhara, "A Low-Distortion 230W GaAs Power FP-HFET Operated at 22V for Cellular Base Stations", 2000 IEDM Technical Digest, pp.393-396.
3. K.Inoue, M.Nagahara, N.Ui, H.Haematsu, S.Sano, and J.Fukaya, "A High Gain L-band GaAs FET Technology for 28V Operation", 2004 IEEE MTT-S Digest, pp.821-824.
4. M.Nagahara, K.Inoue, S.Sano, H.Takahashi, and S.Takase, "A 28V 250W GaAs Power FET with High Gain of 15.5dB for W-CDMA Base Stations", 2004 IEEE MTT-S Digest, pp.1359-1362.