AlGaN/GaN Schottky-barrier UV-B bandpass photodetectors with ITO contacts and LT-GaN cap layers

Semiconductor Science and Technology

Volumn 21, Issue 8, 2006, Pages 1064-1068

  Ko, T K ^a   Chang, S J ^a   Sheu, J K ^a   Shei, S C ^b   Chiou, Y Z ^c   Lee, M L ^c   Shen, C F ^a   Chang, S P ^a   Lin, K W ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL UNIVERSITY OF TAINAN   (Taiwan)

^c SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BANDWIDTH; PHOTODETECTORS; SEMICONDUCTING ALUMINUM COMPOUNDS; THERMAL EFFECTS; ULTRAVIOLET RADIATION;

BANDPASS PHOTODETECTORS; DARK CURRENTS; INDIUM TIN OXIDE (ITO);

SCHOTTKY BARRIER DIODES;

EID: 33749045886     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/8/014     Document Type: Article

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