Photoluminescence of Mg-doped GaN epilayers at different concentrations

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 23, Issue 11, 2002, Pages 1168-1172

  Zhou, Xiaoying ^a   Guo, Wenping ^a   Hu, Hui ^a   Sun, Changzheng ^a   Luo, Yi ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

Anneal; Compensation; GaN; P doped; PL; Potential fluctuation

Indexed keywords

ANNEALING; CONCENTRATION (PROCESS); MAGNESIUM PRINTING PLATES; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE;

COMPENSATION; EPILAYERS;

GALLIUM NITRIDE;

EID: 0036868718     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (13)

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