Origins of efficient green light emission in phase-separated InGaN quantum wells

Nanotechnology

Volumn 17, Issue 15, 2006, Pages 3734-3739

  Lai, Yen Lin ^a   Liu, Chuan Pu ^a   Lin, Yung Hsiang ^b   Hsueh, Tao Hung ^a   Lin, Ray Ming ^b   Lyu, Dong Yuan ^c   Peng, Zhao Xiang ^c   Lin, Tai Yuan ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHANG GUNG UNIVERSITY   (Taiwan)

^c NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH RESOLUTION ELECTRON MICROSCOPY; LIGHT EMISSION; LUMINESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHASE SEPARATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; X RAY DIFFRACTION;

CARRIER LOCALIZATION; GREEN LIGHT EMISSIONS; MULTIPLE QUANTUM WELLS (MQW);

SEMICONDUCTOR QUANTUM WELLS;

EID: 33748884587     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/15/020     Document Type: Article

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