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Applied Surface Science

Volumn 252, Issue 11, 2006, Pages 3922-3927

Interface characterization and indium content of indium-rich quantum dots in InGaN/GaN multiple quantum wells

(3) Liu, Chuan Pu a Lai, Yen Lin a Chen, Zheng Quan b

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b GENESIS PHOTONICS INC (Taiwan)

Author keywords

InGaN GaN

Indexed keywords

GALLIUM NITRIDE; LUMINESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

INGAN/GAN; LUMINESCENCE MEASUREMENTS; MICRO-PHOTOLUMINESCENCE MEASUREMENT; ULTRA-SMALL DOTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33645225612 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2005.09.024 Document Type: Conference Paper

Times cited : (11)

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