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Volumn 89, Issue 11, 2006, Pages
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Charge injection and tunneling mechanism of solid state reaction silicon nanocrystal film
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Author keywords
[No Author keywords available]
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Indexed keywords
CARRIER MOBILITY;
DISLOCATIONS (CRYSTALS);
ELECTRIC CURRENTS;
ELECTRIC POTENTIAL;
ELECTRIC SPACE CHARGE;
ELECTRON ENERGY LEVELS;
ELECTRON TUNNELING;
GRAIN BOUNDARIES;
HIGH RESOLUTION ELECTRON MICROSCOPY;
MATHEMATICAL MODELS;
SILICON;
TRANSMISSION ELECTRON MICROSCOPY;
EXPONENTIAL DISTRIBUTION;
SILICON NANOCRYSTALS (SI NC);
SOLID STATE REACTION;
SPACE-CHARGE-LIMITED CURRENT (SCLC);
SEMICONDUCTING FILMS;
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EID: 33748697012
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.2345257 Document Type: Article |
Times cited : (20)
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References (19)
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