Nanoscale thin single-crystal silicon and its application to electronics

Applied Physics Letters

Volumn 84, Issue 13, 2004, Pages 2406-2408

  Avci, Uygar ^a   Tiwari, Sandip ^a  

^a Department of Obstetrics Gynecology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FILM STRUCTURE; LOW CAPACITANCE ISOLATION; RADIATION HARDNESS; THICK LOW-TEMPERATURE OXIDES;

CHARACTERIZATION; CHEMICAL MECHANICAL POLISHING; FABRICATION; GATES (TRANSISTOR); MOS DEVICES; SILICON; SINGLE CRYSTALS; SURFACE ROUGHNESS;

THIN FILMS;

EID: 2142751639     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1689745     Document Type: Article

References (5)

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3. B. Aspar, M. Bruel, M. Zussy, and A. M. Cartier, Electron. Lett. 32, 1985 (1996).
4. Cabot Microelectronics Semiconductor Products, Semi-Sperse® P1000 Polishing Slurry for Polysilicon CMP. [Online] Available; http://www.cabotcmp. com/products_semiconductor.htm.
5. M. Ieong, E. C. Jones, T. Kanarsky, Z. Ren, O. Dokumaci, R. A. Roy, L. Shi, T. Furukawa, Y. Taur, R. J. Miller and H.-S. P. Wong, Tech. Dig. - Int. Electron Devices Meet. 1998, 441.