Random telegraph signals and low-frequency noise in n-metal-oxide-semiconductor field-effect transistors with ultranarrow channels

Applied Physics Letters

Volumn 76, Issue 22, 2000, Pages 3259-3261

  Bu, H M ^a   Shi, Y ^a   Yuan, X L ^a   Wu, J ^a   Gu, S L ^a   Zheng, Y D ^a   Majima, H ^b   Ishikuro, H ^b   Hiramoto, T ^b  

^a NANJING UNIVERSITY   (China)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040706923     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126600     Document Type: Article

References (17)

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