Formation of Si and Ge quantum structures by laser-induced etching

Physica Status Solidi (A) Applications and Materials Science

Volumn 203, Issue 10, 2006, Pages 2444-2450

  Mavi, H S ^a   Prusty, Sudakshina ^a   Kumar, Manoj ^a   Kumar, Rajesh ^a   Shukla, A K ^a   Rath, S ^b  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

^b UNIVERSITY OF DELHI   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTALLINE MATERIALS; GERMANIUM; LASER BEAMS; NANOSTRUCTURED MATERIALS; PHOTONS; PLASMA ETCHING; SILICON; SILICON WAFERS;

CRYSTALLINE SILICON; LASER PHOTON ENERGY; LASER-ETCHED SAMPLES; LASER-INDUCED ETCHING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33748428436     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200521027     Document Type: Article

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