Ultra-high-density Ge quantum dots on insulator prepared by high-vacuum electron-beam evaporation

Journal of Crystal Growth

Volumn 249, Issue 1-2, 2003, Pages 23-27

  Wan, Q ^a,b   Wang, T H ^a   Liu, W L ^b   Lin, C L ^b  

^a INSTITUTE OF PHYSICS   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

A1. Atomic force microscopy; A1. Raman scattering; A3. Germanium quantum dots

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC INSULATORS; ELECTRON BEAMS; EVAPORATION; MORPHOLOGY; RAMAN SCATTERING; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR QUANTUM DOTS; SILICA; VACUUM APPLICATIONS;

HIGH-VACUUM ELECTRON-BEAM EVAPORATION;

SEMICONDUCTOR GROWTH;

EID: 0037296736     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02071-7     Document Type: Conference Paper

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