Self-assembled AlxGa1-xN nanorods grown on Si(001) substrates by using plasma-assisted molecular beam epitaxy

Nanotechnology

Volumn 17, Issue 18, 2006, Pages 4640-4643

  Park, Young S ^a   Hwang, B R ^a   Lee, J C ^a   Im, Hyunsik ^a   Cho, H Y ^a   Kang, T W ^a   Na, J H ^b   Park, C M ^c  

^a Dongguk University   (South Korea)

^b LG Electronics Inc   (South Korea)

^c SAN PLUS Co Ltd   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; SELF ASSEMBLY; SEMICONDUCTING ALUMINUM COMPOUNDS; X RAY DIFFRACTION;

GROWTH RATE; MOLE FRACTION; NANORODS;

NANOSTRUCTURED MATERIALS;

EID: 33748356689     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/18/018     Document Type: Article

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