A low-power, X-band SiGe HBT low-noise amplifier for near-space radar applications

IEEE Microwave and Wireless Components Letters

Volumn 16, Issue 9, 2006, Pages 520-522

  Kuo, Wei Min Lance ^a,b   Krithivasan, Ramkumar ^a,b   Li, Xiangtao ^a,b   Lu, Yuan ^a,b   Cressler, John D ^a,b   Gustat, Hans ^c   Heinemann, Bernd ^c  

^a IEEE   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c IHP   (Germany)

Author keywords

Heterojunction bipolar transistor (HBT); Low noise amplifier (LNA); Low power, noise figure (NF); Radar; Silicon germanium (SiGe); X band

Indexed keywords

LOW-NOISE AMPLIFIER (LNA); NOISE FIGURE (NF); SEMICONDUCTING SILICON-GERMANIUM (SIGE); X-BAND;

ENERGY DISSIPATION; GAIN CONTROL; HETEROJUNCTION BIPOLAR TRANSISTORS; RADAR CIRCUITS; SEMICONDUCTOR DEVICES; SPURIOUS SIGNAL NOISE;

POWER AMPLIFIERS;

EID: 33748352564     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2006.880696     Document Type: Article

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