Monolithic integrated LNAs in silicon-based bipolar technologies

IEEE/AFCEA - EUROCOMM 2000: Information Systems for Enhanced Public Safety and Security

Volumn , Issue , 2000, Pages 400-403

  Zoschg D ^a,b   Wilhelm, W ^a   Knapp, H ^a   Wurzer, M ^a   Meister, T F ^a   Bock J ^a   Wohlmuth, H D ^a   Aufinger, K ^a   Treitinger, L ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

Gain; Germanium silicon alloys; Low noise amplifiers; Mobile communication; Noise figure; Radio frequency; Radio link; Receivers; Silicon germanium; Transceivers

Indexed keywords

BICMOS TECHNOLOGY; FREQUENCY BANDS; GERMANIUM; GERMANIUM ALLOYS; INFORMATION SYSTEMS; MOBILE TELECOMMUNICATION SYSTEMS; MONOLITHIC INTEGRATED CIRCUITS; NOISE FIGURE; RADIO LINKS; RADIO TRANSCEIVERS; RECEIVERS (CONTAINERS); SILICON; SILICON ALLOYS; TRANSCEIVERS; WIRELESS TELECOMMUNICATION SYSTEMS;

GAIN; GERMANIUM SILICON ALLOY; MOBILE COMMUNICATIONS; RADIO FREQUENCIES; SILICON GERMANIUM;

LOW NOISE AMPLIFIERS;

EID: 33748352627     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EURCOM.2000.874842     Document Type: Conference Paper

References (8)

1. J.R. Long, M.A. Copeland, S.J. Kovacic, D.S. Malhi, and D.L. Harame, "RF Analog and Digital Circuits in SiGe Technology", IEEE International Solid-State Circuits Conference, vol. 39, pp. 52-54, February 1996.
2. U. Erben, A. Schumacher, A. Schüppen, and J. Arndt, "Application of SiGe heterojunction bipolar transistor in 5.8 and 10 GHz low-noise amplifiers", Electronics Letters, vol. 34, pp. 1497-1500, July 1998.
3. D. Zöschg, W. Wilhelm, T.F. Meister, H. Knapp, H.-D. Wohlmuth, K. Aufinger, M. Wurzer, J. Böck, H. Schäfer, and A.L. Scholtz, "2 dB noise figure, 10.5 GHz LNA using SiGe bipolar technology", Electronics Letters, vol. 35, pp. 2195-2196, December 1999.
4. S. Ganser and S. Herzinger, "Silicon LNA/Mixer ICs for use up to 3 GHz", Microwave Engineering Europe, vol. 37, pp. 33-39, December/January 1997.
5. Ono Masayoshi, Noriharu Suematsu, Shunji Kobo, Yoishitada Iyama, Tadashi Takagi, and Osami Ishida, "1.9 GHz/5.8 GHz-Band On-Chip Matching Si-MMIC Low Noise Amplifiers Fabricated on High Resistive Si Substrate", IEEE MTT-S Int. Microwave Symposium Digest, vol. 2, pp. 493-496, June 1999.
6. H. Ainspan, M. Soyuer, J.-O. Plouchart, and J. Burghartz, "A 6.25 GHz Low DC Power Low-Noise Amplifier in SiGe", IEEE Custom Integrated Circuits Conference, vol. , pp. 177-180, 1997.
7. K. Aufinger, H. Knapp, R. Gabl, T. F. Meister, J. Böck, H. Schäfer, M. Pohl, and L. Treitinger, "Noise Characteristics of 0.5 μm/50 GHz Si and 0.5 μm/70 GHz SiGe Bipolar Technologies", 29th European Microwave Conference Proceedings, vol. 2, pp. 129-132, October 1999.
8. T.F. Meister, H. Schäfer, M. Franosch, M. Molzer, K. Aufinger, U. Scheler, C. Walz, M. Stolz, S. Boguth, and J. Böck, "SiGe Base Bipolar Technology with 74 GHz fmax and 11 ps Gate Delay", in IEDM Technical Digest, pp. 739-742, December 1995, TP 30.3.