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Volumn , Issue , 2004, Pages 287-290

An inductor-based 52-GHz 0.18 μm SiGe HBT cascode LNA with 22 dB gain

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC LINES; ELECTRIC POTENTIAL; GAIN MEASUREMENT; HETEROJUNCTION BIPOLAR TRANSISTORS; LINEAR NETWORK ANALYSIS; LOGIC DESIGN; NETWORKS (CIRCUITS); POWER INDUCTORS; TOPOLOGY;

EID: 17644404811     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (26)

References (10)
  • 1
    • 0242527285 scopus 로고    scopus 로고
    • SiGe BiCMOS technology for communication products
    • M. Racanelli and P. Kempf, "SiGe BiCMOS Technology for Communication Products", Proc. IEEE CICC 2003, pp.331-334.
    • Proc. IEEE CICC 2003 , pp. 331-334
    • Racanelli, M.1    Kempf, P.2
  • 2
    • 1042277548 scopus 로고    scopus 로고
    • max 0.13μm SiGe:C BiCMOS technology
    • max 0.13μm SiGe:C BiCMOS technology", Proc. IEEE BCTM 2003, pp. 199-202.
    • Proc. IEEE BCTM 2003 , pp. 199-202
    • Laurens, M.1
  • 5
    • 0037319508 scopus 로고    scopus 로고
    • Millimeter-wave VCOs with wide tuning range and low phase noise, fully integrated in a SiGe bipolar production technology
    • February
    • H. Li and H.M. Rein, "Millimeter-wave VCOs with wide tuning range and low phase noise, fully integrated in a SiGe bipolar production technology", IEEE J. Solid-State Circuits, vol. 38, no. 2, pp. 184-191, February 2003.
    • (2003) IEEE J. Solid-state Circuits , vol.38 , Issue.2 , pp. 184-191
    • Li, H.1    Rein, H.M.2
  • 6
    • 2442640658 scopus 로고    scopus 로고
    • 60GHz transceiver circuits in SiGe bipolar technology
    • S. Reynolds et al., "60GHz Transceiver Circuits in SiGe Bipolar Technology", IEEE ISSCC Digest and Slides Supplement, pp.442-443, 2004.
    • (2004) IEEE ISSCC Digest and Slides Supplement , pp. 442-443
    • Reynolds, S.1
  • 8
    • 17644400303 scopus 로고    scopus 로고
    • Si-based inductors and transformers for 30-100 GHz applications
    • accepted for publication June
    • T. Dickson et al, "Si-based Inductors and Transformers for 30-100 GHz Applications", accepted for publication in Intl. Microwave Symposium, June 2004.
    • (2004) Intl. Microwave Symposium
    • Dickson, T.1
  • 9
    • 0031236647 scopus 로고    scopus 로고
    • A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design
    • September
    • S.P. Voinigescu et al, "A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design" IEEE J. Solid-State Circuits, vol.32, no.9, pp. 1430-1439, September 1997.
    • (1997) IEEE J. Solid-state Circuits , vol.32 , Issue.9 , pp. 1430-1439
    • Voinigescu, S.P.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.