An 8.2-GHz, 14.4mW, 1.6dB NF SiGe bipolar LNA with DC current reuse

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2003, Pages 49-52

  Gramegna, Giuseppe ^a   Magliarisi, Angelo ^a   Paparo, Mario ^a  

^a STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CAPACITANCE; CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENTS; ELECTRIC INDUCTORS; ELECTRIC POWER SUPPLIES TO APPARATUS; ELECTRIC RESISTANCE; NATURAL FREQUENCIES; RESONATORS; SEMICONDUCTING SILICON COMPOUNDS;

LOW NOISE AMPLIFIER; MILLER EFFECT NEUTRALIZATION SCHEME;

AMPLIFIERS (ELECTRONIC);

EID: 1042266066     PISSN: 10889299     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/bipol.2003.1274933     Document Type: Conference Paper

References (6)

1. Axel Schmidt and Stephanie Catala, "A Universal Dual Band LNA Implementation in SiGe Technology for Wireless Applications", IEEE Journal of Solid-State Circuits, Vol. 36, No. 7, pp. 1127-1131, July 2001.
2. Osama Shana'a et al., "Frequency-Scalable SiGe Bipolar RF Front-End Design", IEEE Journal of Solid-State Circuits, Vol. 36, No. 6, pg. 888-895, June 2001.
3. D.Zöschg et al., "Monolithic Integrated LNAs in Silicon-Based Bipolar Technologies", 2000 IEEE EUROCOMM 2000, pp. 400-403.
4. H. Knapp et al., "15 GHz Wideband Amplifier with 2.8 dB Noise Figure in SiGe Bipolar Technology", 2001 IEEE Radio Frequency Integrated Circuits Symposium, pg. 287-290.
5. G.Schuppener, T.Harada and Y.Li, "A 23-GHz Low-Noise Amplifier in SiGe Heterjunction Bipolar Technology", 2001 IEEE Radio Frequency Integrated Circuits Symposium, pp. 177-180.
6. G.Gramegna et al., "Precision Low-Noise Current Mode Biasing Scheme for BJT with Inductive Emitter Degeneration", Patent US 6,271,695 B1 Aug. 7 2001.