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Volumn 2006, Issue , 2006, Pages 498-501

An X-band SiGe LNA with 1.36 dB mean noise figure for monolithic phased array transmit/receive radar modules

Author keywords

Heterojunction bipolar transistor (HBT); Low noise amplifier (LNA); Noise figure (NF); Phased array; Silicon germanium (SiGe); Transmit receive (T R) module; X band

Indexed keywords

ACOUSTIC NOISE; BANDWIDTH; CMOS INTEGRATED CIRCUITS; GAIN CONTROL; HETEROJUNCTION BIPOLAR TRANSISTORS; POWER AMPLIFIERS; RADAR TRANSMITTERS;

EID: 33748360592     PISSN: 15292517     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (51)

References (16)
  • 2
    • 0026630619 scopus 로고
    • Array technology
    • Jan.
    • R. Tang et al., "Array technology," Proc. IEEE, vol. 80, p. 173, Jan. 1992.
    • (1992) Proc. IEEE , vol.80 , pp. 173
    • Tang, R.1
  • 5
    • 33845907511 scopus 로고    scopus 로고
    • Air and Missile Defense Division, Georgia Tech Research Institute, Memorandum TAT030509
    • M. Mitchell, "SiGe T/R chip preliminary requirements," Air and Missile Defense Division, Georgia Tech Research Institute, Memorandum TAT030509, 2004.
    • (2004) SiGe T/R Chip Preliminary Requirements
    • Mitchell, M.1
  • 7
    • 17644404811 scopus 로고    scopus 로고
    • An inductor-based 52-GHz 0.18 μm SiGe HBT cascode LNA with 22 dB gain
    • M. Gordon et al., "An inductor-based 52-GHz 0.18 μm SiGe HBT cascode LNA with 22 dB gain," in Proc. ESSCIRC, 2004, p. 287.
    • (2004) Proc. ESSCIRC , pp. 287
    • Gordon, M.1
  • 8
    • 0034270887 scopus 로고    scopus 로고
    • A low-voltage 5.1-5.8-GHz image-reject downconverter RF IC
    • Sept.
    • J.R. Long, "A low-voltage 5.1-5.8-GHz image-reject downconverter RF IC," IEEE J. Solid-State Circuits, vol. 35, p. 1320, Sept. 2000.
    • (2000) IEEE J. Solid-state Circuits , vol.35 , pp. 1320
    • Long, J.R.1
  • 9
    • 0035445551 scopus 로고    scopus 로고
    • RF linearity characteristics of SiGe HBTs
    • Sept.
    • G. Niu et al., "RF linearity characteristics of SiGe HBTs," IEEE Trans. Microw. Theory Tech., vol. 49, p. 1558, Sept. 2001.
    • (2001) IEEE Trans. Microw. Theory Tech. , vol.49 , pp. 1558
    • Niu, G.1
  • 10
    • 0035368292 scopus 로고    scopus 로고
    • Frequency-scalable SiGe bipolar RF front-end design
    • Jun.
    • O. Shana'a et al., "Frequency-scalable SiGe bipolar RF front-end design," IEEE J. Solid-State Circuits, vol. 36, p. 888, Jun. 2001.
    • (2001) IEEE J. Solid-state Circuits , vol.36 , pp. 888
    • Shana'a, O.1
  • 11
    • 0031236647 scopus 로고    scopus 로고
    • A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design
    • Sept.
    • S.p. Voinigescu et al., "A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design," IEEE J. Solid-State Circuits, vol. 32, p. 1430, Sept. 1997.
    • (1997) IEEE J. Solid-state Circuits , vol.32 , pp. 1430
    • Voinigescu, S.P.1
  • 12
    • 12344291973 scopus 로고    scopus 로고
    • On the optimization and design of SiGe HBT cascode low-noise amplifiers
    • Mar.
    • Q. Liang et al., "On the optimization and design of SiGe HBT cascode low-noise amplifiers," Solid-State Electronics, vol. 49, p. 329, Mar. 2005.
    • (2005) Solid-state Electronics , vol.49 , pp. 329
    • Liang, Q.1
  • 13
    • 30944433218 scopus 로고    scopus 로고
    • X-band low noise amplifier using SiGe BiCMOS technology
    • V.J. Patel et al., "X-band low noise amplifier using SiGe BiCMOS technology," in IEEE CSICS Tech. Dig., 2005, p. 49.
    • (2005) IEEE CSICS Tech. Dig. , pp. 49
    • Patel, V.J.1
  • 14
    • 1042266066 scopus 로고    scopus 로고
    • An 8.2-GHz, 14.4mW, 1.6dB NF SiGe bipolar LNA with DC current reuse
    • G. Gramegna et al., "An 8.2-GHz, 14.4mW, 1.6dB NF SiGe bipolar LNA with DC current reuse," in Proc. IEEE BCTM, 2003, p. 49.
    • (2003) Proc. IEEE BCTM , pp. 49
    • Gramegna, G.1
  • 15
    • 33748352627 scopus 로고    scopus 로고
    • Monolithic integrated LNAs in silicon-based bipolar technologies
    • D. Zöschg et al., "Monolithic integrated LNAs in silicon-based bipolar technologies," m Proc. IEEE/AFCEA EUROCOMM, 2000, p. 400.
    • (2000) Proc. IEEE/AFCEA EUROCOMM , pp. 400
    • Zöschg, D.1
  • 16
    • 84962009058 scopus 로고    scopus 로고
    • Application of a production ready SiGe HBT process to 1.9, 5.7 and 10 GHz low noise MMIC's
    • U. Erben et al., "Application of a production ready SiGe HBT process to 1.9, 5.7 and 10 GHz low noise MMIC's," in Si Monolithic IC in RF Sys. Dig., 1998, p. 100.
    • (1998) Si Monolithic IC in RF Sys. Dig. , pp. 100
    • Erben, U.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.