Material properties of low pressure chemical vapor deposited silicon nitride for modeling and calibrating the simulation of advanced isolation structures

Journal of Applied Physics

Volumn 78, Issue 4, 1995, Pages 2837-2842

  Smeys, Peter I L ^a   Griffin, Peter B ^a   Saraswat, Krishna C ^a  

^a STANFORD UNIVERSITY   (United States)

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[No Author keywords available]

Indexed keywords

EID: 0001317086     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.360084     Document Type: Article

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