A New Study of the Junction Leakage Current due to 45◦-off Active Pattern after Locos Process

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1993, Pages 743-746

  Itoh, Masahiro ^a   Habutsu, Yoshimune ^a   Kuroda, Shigeki ^a   Nagatomo, Yoshiki ^a   Ino, Masayoshi ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

LEAKAGE CURRENTS; SHEAR FLOW; SILICON COMPOUNDS; CHARGE CARRIERS; DIFFUSION; RANDOM ACCESS STORAGE; SEMICONDUCTOR JUNCTIONS; SHEAR STRESS;

CURRENT INCREASE; FIELD OXIDES; FILM-THICKNESS; INDUCED STRESS; JUNCTION LEAKAGE CURRENTS; NEW STUDY;

SHEAR STRESS; LEAKAGE CURRENTS;

ACTIVE PATTERN; FIELD OXIDE; GLIDE DIRECTION;

EID: 0027879340     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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