First principles simulations of SiC-based interfaces

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 541-546

  Catellani, A ^a   Cicero, G ^b   Righi, M C ^c   Pignedoli, C A ^c,d  

^a IMEM CNR   (Italy)

^b POLITECNICO DI TORINO   (Italy)

^c UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^d IBM RESEARCH ZURICH   (Switzerland)

Author keywords

Chemisorption physisorption: Adsorbate structures; Dislocations; Molecular dynamics; Silicon carbide; Solid solid and liquid solid interfaces; Structure and energetics

Indexed keywords

CHEMISORPTION; DISLOCATIONS (CRYSTALS); INTERFACES (MATERIALS); MOLECULAR DYNAMICS;

HOMOEPITAXY; LIQUID-SOLID INTERFACES;

SILICON CARBIDE;

EID: 33747891531     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.541     Document Type: Conference Paper

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