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Volumn 44, Issue 3, 1998, Pages 309-314

Carbon vacancy in SiC: A negative-U system

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0032210785     PISSN: 02955075     EISSN: None     Source Type: Journal    
DOI: 10.1209/epl/i1998-00475-5     Document Type: Article
Times cited : (15)

References (22)
  • 3
    • 5844305504 scopus 로고
    • BARAFF G. A., KANE E. O. and SCHLÜTER M., Phys. Rev. Lett., 43 (1997) 956; Phys. Rev. B, 21 (1980) 5662.
    • (1980) Phys. Rev. B , vol.21 , pp. 5662
  • 5
    • 0039254294 scopus 로고    scopus 로고
    • note
    • 2-derived vacancy level is occupied by one electron; ++, if unoccupied.
  • 17
    • 2442537377 scopus 로고    scopus 로고
    • KRESSE G. and FURTHMÜLLER J., Comput. Mat. Sci., 6 (1996) 15; Phys. Rev. B, 54 (1996) 11169.
    • (1996) Phys. Rev. B , vol.54 , pp. 11169
  • 19
    • 0039846020 scopus 로고    scopus 로고
    • note
    • 2o symmetry.
  • 20
    • 0003219297 scopus 로고
    • edited by New Series, Group IV and III-V, (Springer, Berlin)
    • Landolt-Börnstein, edited by O. MADELUNG, M. SCHULZ and H. WEISS, New Series, Group IV and III-V, Vol. 17, Pt.a (Springer, Berlin) 1982.
    • (1982) Landolt-Börnstein , vol.17 , Issue.PT.A
    • Madelung, O.1    Schulz, M.2    Weiss, H.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.