Strain relaxation and thermal stability of the 3C-SiC(001)/Si(001) interface: A molecular dynamics study

Thin Solid Films

Volumn 294, Issue 1-2, 1997, Pages 47-49

  Chirita, V ^a   Hultman, L ^a   Wallenberg, L R ^b  

^a LINKÖPING UNIVERSITY   (Sweden)

^b LUND UNIVERSITY   (Sweden)

Author keywords

Interfaces; Molecular dynamics; Strain relaxation; Thermal stability

Indexed keywords

DISLOCATIONS (CRYSTALS); MICROSCOPIC EXAMINATION; MOLECULAR DYNAMICS; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; STABILITY;

HIGH RESOLUTION ELECTRON MICROSCOPY; STRAIN RELAXATION;

SEMICONDUCTING SILICON;

EID: 0031069221     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09257-7     Document Type: Article

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