-
1
-
-
0029379463
-
The role of surface adsorbates in the metalorganic vapour phase epitaxial growth of (Hg,Cd)Te onto (100) GaAs substrates
-
J.Giess, J.RHails, A.Graham, G.Blackmore, M.R.Houlton, J.Newey, M.L.Young, M.G.Astles, W.Bell and D.J.Cole-Hamilton, "The Role of Surface Adsorbates in the Metalorganic Vapour Phase Epitaxial Growth of (Hg,Cd)Te onto (100) GaAs Substrates", J.Electron.Mater., 24(9), 1149 (1995)
-
(1995)
J.Electron.Mater.
, vol.24
, Issue.9
, pp. 1149
-
-
Giess, J.1
Hails, J.R.2
Graham, A.3
Blackmore, G.4
Houlton, M.R.5
Newey, J.6
Young, M.L.7
Astles, M.G.8
Bell, W.9
Cole-Hamilton, D.J.10
-
2
-
-
33747667191
-
1-xTe by MOVPE onto GaAs substrates
-
1-xTe by MOVPE onto GaAs Substrates", J.Cryst.Growth, 72, 120 (1985)
-
(1985)
J.Cryst.Growth
, vol.72
, pp. 120
-
-
Geiss, J.1
Gough, J.S.2
Irvine, S.J.C.3
Blackmore, G.W.4
Mullin, J.B.5
Royle, A.6
-
3
-
-
0043269242
-
Metal-organic vapour-phase epitaxial growth of HgCdTe device heterostructures on three-inch-diameter substrates
-
C.D.Maxey, J.P.Camplin, I.T.Guilfoy, J.Gardner, R.A.Lockett, C.L.Jones, P.Capper, M.Houlton and N.T.Gordon, "Metal-organic vapour-phase epitaxial growth of HgCdTe device heterostructures on three-inch-diameter substrates", J.Electron.Mater., 32(7), 656 (2003)
-
(2003)
J.Electron.Mater.
, vol.32
, Issue.7
, pp. 656
-
-
Maxey, C.D.1
Camplin, J.P.2
Guilfoy, I.T.3
Gardner, J.4
Lockett, R.A.5
Jones, C.L.6
Capper, P.7
Houlton, M.8
Gordon, N.T.9
-
4
-
-
0346335579
-
HgCdTe epilayers on GaAs: Growth and devices
-
V.S.Varavin, V.V.Vasiliev, S.A.Dvoretsky, N.N.Mikhailov, V.N.Ovsyuk, YU.G.Sidorov, A.O.Suslyakov, M.V.Yakushev and A.L.Assev, "HgCdTe epilayers on GaAs: growth and devices", Opto-Electon.Rev. 11(2), 99 (2003)
-
(2003)
Opto-electon.Rev.
, vol.11
, Issue.2
, pp. 99
-
-
Varavin, V.S.1
Vasiliev, V.V.2
Dvoretsky, S.A.3
Mikhailov, N.N.4
Ovsyuk, V.N.5
Sidorov, Y.U.G.6
Suslyakov, A.O.7
Yakushev, M.V.8
Assev, A.L.9
-
5
-
-
0029230539
-
Reduction of autodoped gallium concentration in HgCdTe layers on GaAs grown metalorganic vapour phase epitaxy
-
H.Hishino, S.Murakami, H.Ebe and Y.Nishijima, "Reduction of autodoped gallium concentration in HgCdTe layers on GaAs grown metalorganic vapour phase epitaxy", J.Cryst.Growth, 146, 619 (1995)
-
(1995)
J.Cryst.Growth
, vol.146
, pp. 619
-
-
Hishino, H.1
Murakami, S.2
Ebe, H.3
Nishijima, Y.4
-
6
-
-
33144454425
-
High-resolution FPAs on MBE-grown HgCdTe/CdTe/Ge
-
G.Badano, P.Ballet, J.P.Zanatta, A.Millon, C.Largeron, J.Baylet, J.Rothman, O.Gravrand, P.Castelein, J.P.Chamonal, G.Destefanis, S.Mibord and P.Costa, "High-Resolution FPAs on MBE-Grown HgCdTe/CdTe/Ge", Proc. SPIE, 5964, 40 (2005)
-
(2005)
Proc. SPIE
, vol.5964
, pp. 40
-
-
Badano, G.1
Ballet, P.2
Zanatta, J.P.3
Millon, A.4
Largeron, C.5
Baylet, J.6
Rothman, J.7
Gravrand, O.8
Castelein, P.9
Chamonal, J.P.10
Destefanis, G.11
Mibord, S.12
Costa, P.13
-
7
-
-
20144373996
-
MWIR detectors on HgCdTe grown by MBE on 3-inch diameter silicon substrates
-
T.S.Lee, J.Zhao, Y.Chang, R.Ashokan, S.Sivananthan, P.Boieriu, Y.Chen, G.Brill, P.S.Wijewarnasuriya and N.Dhar, "MWIR detectors on HgCdTe grown by MBE on 3-inch diameter silicon substrates", Proc. SPIE, 5564, 113 (2004)
-
(2004)
Proc. SPIE
, vol.5564
, pp. 113
-
-
Lee, T.S.1
Zhao, J.2
Chang, Y.3
Ashokan, R.4
Sivananthan, S.5
Boieriu, P.6
Chen, Y.7
Brill, G.8
Wijewarnasuriya, P.S.9
Dhar, N.10
-
8
-
-
21844448595
-
Status of HgCdTe/Si technology for large format infrared focal plane arrays
-
S.M.Johnson, W.A.Radford, A.A.Buell, M.F.Vilela, J.M.Peterson, J.J.Franklin, R.E.Bornfreund, A.C.Childs, G.M.Venzor, M.D.newton, E.P.G.Smith, L.M.Ruzicka, G.K.Pierce, D.D.Lofgreen, TJ.de Lyon and J.E.Jensen, "Status of HgCdTe/Si Technology for Large Format Infrared Focal Plane Arrays", Proc. SPIE, 5732, 250 (2005)
-
(2005)
Proc. SPIE
, vol.5732
, pp. 250
-
-
Johnson, S.M.1
Radford, W.A.2
Buell, A.A.3
Vilela, M.F.4
Peterson, J.M.5
Franklin, J.J.6
Bornfreund, R.E.7
Childs, A.C.8
Venzor, G.M.9
Newton, M.D.10
Smith, E.P.G.11
Ruzicka, L.M.12
Pierce, G.K.13
Lofgreen, D.D.14
De Lyon, T.J.15
Jensen, J.E.16
-
9
-
-
5444249049
-
High-performance long-wavelength HgCdTe infrared detectors grown on silicon substrates
-
D.J.Hall, L.Buckle, N.T.Gordon, J.Giess, J.E.Hails, J.W.Cairns, R.M.Lawrence, A.Graham, R.S.Hall, C.Maltby and T.Ashley, "High-performance long-wavelength HgCdTe infrared detectors grown on silicon substrates", Appl.Phys.Lett., 85(11), 2113 (2004)
-
(2004)
Appl.Phys.Lett.
, vol.85
, Issue.11
, pp. 2113
-
-
Hall, D.J.1
Buckle, L.2
Gordon, N.T.3
Giess, J.4
Hails, J.E.5
Cairns, J.W.6
Lawrence, R.M.7
Graham, A.8
Hall, R.S.9
Maltby, C.10
Ashley, T.11
-
10
-
-
10044264488
-
Long wavelength infrared focal plane arrays fabricated from HgCdTe grown on silicon substrates
-
D.J.Hall, L.Buckle, N.T.Gordon, J.Giess, J.E.Hails, J.W.Cairns, R.M.Lawrence, A.Graham, R.S.Hall, C.Maltby and T.Ashley, "Long wavelength infrared focal plane arrays fabricated from HgCdTe grown on silicon substrates", Proc. SPIE., 5406, 317 (2004)
-
(2004)
Proc. SPIE.
, vol.5406
, pp. 317
-
-
Hall, D.J.1
Buckle, L.2
Gordon, N.T.3
Giess, J.4
Hails, J.E.5
Cairns, J.W.6
Lawrence, R.M.7
Graham, A.8
Hall, R.S.9
Maltby, C.10
Ashley, T.11
-
11
-
-
21644468820
-
Molecular beam epitaxy grown long wavelength infrared HgCdTe on si detector performance
-
M.Cakmody, J.G.Pasko, D.Edwall, R.Bailey, J.Arias, S.Cabelli, J.Bajaj, L.A.Almeida, J.H.Dinan, M.Groenert, A.J.Stoltz, Y.Chen, G.Brill and N.K.Dhar, "Molecular beam epitaxy grown long wavelength infrared HgCdTe on si detector performance", J.Electron.Mater., 34, 832 (2005)
-
(2005)
J.Electron.Mater.
, vol.34
, pp. 832
-
-
Cakmody, M.1
Pasko, J.G.2
Edwall, D.3
Bailey, R.4
Arias, J.5
Cabelli, S.6
Bajaj, J.7
Almeida, L.A.8
Dinan, J.H.9
Groenert, M.10
Stoltz, A.J.11
Chen, Y.12
Brill, G.13
Dhar, N.K.14
-
12
-
-
3042790451
-
Long wavelength infrared, molecular beam epitaxy, HgCdTe-on-Si diode performance
-
M.Cakmody, J.G.Pasko, D.Edwall, M.Daraselia, L.A.Almeida, J.Molstad, J.H.Dinan, J.K.Markunas, Y.Chen, G.Brill and N.K.Dhar, "Long wavelength infrared, molecular beam epitaxy, HgCdTe-on-Si diode performance", J.Electron.Mater., 33, 531 (2004)
-
(2004)
J.Electron.Mater.
, vol.33
, pp. 531
-
-
Cakmody, M.1
Pasko, J.G.2
Edwall, D.3
Daraselia, M.4
Almeida, L.A.5
Molstad, J.6
Dinan, J.H.7
Markunas, J.K.8
Chen, Y.9
Brill, G.10
Dhar, N.K.11
-
13
-
-
0042441975
-
HgCdTe on Si: Present status and novel buffer layer concepts
-
T.D.Golding, O.W.Holland, M.J.Kim, J.H.Dinan, L.A.Almeida, J.M.Arias, J.Bajaj, H.D.Shih and W.P.Kirk, "HgCdTe on Si: Present status and novel buffer layer concepts", J.Electron.Mater., 32, 882 (2003)
-
(2003)
J.Electron.Mater.
, vol.32
, pp. 882
-
-
Golding, T.D.1
Holland, O.W.2
Kim, M.J.3
Dinan, J.H.4
Almeida, L.A.5
Arias, J.M.6
Bajaj, J.7
Shih, H.D.8
Kirk, W.P.9
-
14
-
-
0035360145
-
Improved morpholgy and crystalline quality of MBE CdZnTe/Si
-
L.A.Almeida, L.Hirsch, M.Martinka, P.R.Boyd and J.H.Dinan, "Improved morpholgy and crystalline quality of MBE CdZnTe/Si", J.Electron.Mater., 30, 608 (2001)
-
(2001)
J.Electron.Mater.
, vol.30
, pp. 608
-
-
Almeida, L.A.1
Hirsch, L.2
Martinka, M.3
Boyd, P.R.4
Dinan, J.H.5
-
15
-
-
0033702186
-
HgCdTe heteroepitaxy on three-inch (112) CdZnTe/Si: Ellipsometric control of substrate temperature
-
L.A.Almeida, N.K.Dhar, M.Martinka and J.H.Dinan, "HgCdTe heteroepitaxy on three-inch (112) CdZnTe/Si: Ellipsometric control of substrate temperature", J.Electron.Mater., 29, 754 (2000)
-
(2000)
J.Electron.Mater.
, vol.29
, pp. 754
-
-
Almeida, L.A.1
Dhar, N.K.2
Martinka, M.3
Dinan, J.H.4
-
16
-
-
26444458348
-
FPA technology advancements at rockwell scientific
-
T.Chuh, "FPA Technology Advancements at Rockwell Scientific", Proc. SPIE, 5783, 907 (2005)
-
(2005)
Proc. SPIE
, vol.5783
, pp. 907
-
-
Chuh, T.1
-
17
-
-
0027643761
-
MOCVD Grown CdZnTe/GaAs/Si Substrates for Large-area HgCdTe IFFPAs
-
S.M.Johnson, J.A.Vigil, J.B.James, C.A.Cockrum, W.H.Konkel, M.H.Kalisher, R.F.Risser, T.Tung, W.J.Hamilton, W.L.Ahlgren and J.M.Myrosznyk, "MOCVD Grown CdZnTe/GaAs/Si Substrates for Large-Area HgCdTe IFFPAs", J.Electron.Mater., 22(8), 835 (1993)
-
(1993)
J.Electron.Mater.
, vol.22
, Issue.8
, pp. 835
-
-
Johnson, S.M.1
Vigil, J.A.2
James, J.B.3
Cockrum, C.A.4
Konkel, W.H.5
Kalisher, M.H.6
Risser, R.F.7
Tung, T.8
Hamilton, W.J.9
Ahlgren, W.L.10
Myrosznyk, J.M.11
-
19
-
-
33747652614
-
-
International patent publication WO2006/013344
-
International patent publication WO2006/013344
-
-
-
-
20
-
-
0021420563
-
The growth of highly uniform cadmium mercury telluride by a new MOVPE technique
-
S.J.C.Irvine, J.Tunnicliffe and J.B.Mullin, "The Growth of Highly Uniform Cadmium Mercury Telluride by a new MOVPE Technique", Matt.Lett., 2(4B), 305 (1984)
-
(1984)
Matt.Lett.
, vol.2
, Issue.4 B
, pp. 305
-
-
Irvine, S.J.C.1
Tunnicliffe, J.2
Mullin, J.B.3
-
21
-
-
0742326452
-
A new MOVPE technique for the growth of highly uniform CMT
-
J.Tunnicliffe, S.J.C.Irvine, O.D.Dosser and J.B.Mullin, "A New MOVPE Technique for the Growth of Highly Uniform CMT", J.Cryst.Growth, 68, 245 (1984)
-
(1984)
J.Cryst.Growth
, vol.68
, pp. 245
-
-
Tunnicliffe, J.1
Irvine, S.J.C.2
Dosser, O.D.3
Mullin, J.B.4
-
22
-
-
33747723700
-
-
International patent publication WO2005/098097
-
International patent publication WO2005/098097
-
-
-
-
23
-
-
0041766135
-
Inductively coupled plasma etching of HgCdTe
-
E.P.G.Smith, J.K.Gleason, L.T.Pham, E.A.Patten and M.S.Welkowsky, "Inductively Coupled Plasma Etching of HgCdTe", J.Electron.Mater., 32(7), 816 (2003)
-
(2003)
J.Electron.Mater.
, vol.32
, Issue.7
, pp. 816
-
-
Smith, E.P.G.1
Gleason, J.K.2
Pham, L.T.3
Patten, E.A.4
Welkowsky, M.S.5
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