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Volumn 6206 I, Issue , 2006, Pages

Integrated infrared detectors and readout circuits

Author keywords

CMT; Focal plane array; FPA; HgCdTe; Infrared detector; Integrated Circuits; MBE; MCT; MOVPE; ROIC

Indexed keywords

BANDWIDTH; INTEGRATED CIRCUITS; MERCURY COMPOUNDS; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; SILICON WAFERS;

EID: 33747704216     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.674017     Document Type: Conference Paper
Times cited : (11)

References (23)
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    • (1995) J.Cryst.Growth , vol.146 , pp. 619
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  • 15
    • 0033702186 scopus 로고    scopus 로고
    • HgCdTe heteroepitaxy on three-inch (112) CdZnTe/Si: Ellipsometric control of substrate temperature
    • L.A.Almeida, N.K.Dhar, M.Martinka and J.H.Dinan, "HgCdTe heteroepitaxy on three-inch (112) CdZnTe/Si: Ellipsometric control of substrate temperature", J.Electron.Mater., 29, 754 (2000)
    • (2000) J.Electron.Mater. , vol.29 , pp. 754
    • Almeida, L.A.1    Dhar, N.K.2    Martinka, M.3    Dinan, J.H.4
  • 16
    • 26444458348 scopus 로고    scopus 로고
    • FPA technology advancements at rockwell scientific
    • T.Chuh, "FPA Technology Advancements at Rockwell Scientific", Proc. SPIE, 5783, 907 (2005)
    • (2005) Proc. SPIE , vol.5783 , pp. 907
    • Chuh, T.1
  • 19
    • 33747652614 scopus 로고    scopus 로고
    • International patent publication WO2006/013344
    • International patent publication WO2006/013344
  • 20
    • 0021420563 scopus 로고
    • The growth of highly uniform cadmium mercury telluride by a new MOVPE technique
    • S.J.C.Irvine, J.Tunnicliffe and J.B.Mullin, "The Growth of Highly Uniform Cadmium Mercury Telluride by a new MOVPE Technique", Matt.Lett., 2(4B), 305 (1984)
    • (1984) Matt.Lett. , vol.2 , Issue.4 B , pp. 305
    • Irvine, S.J.C.1    Tunnicliffe, J.2    Mullin, J.B.3
  • 22
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    • International patent publication WO2005/098097
    • International patent publication WO2005/098097


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.