Long wavelength infrared, molecular beam epitaxy, HgCdTe-on-Si diode performance

Journal of Electronic Materials

Volumn 33, Issue 6, 2004, Pages 531-537

  Carmody, M ^a   Pasko, J G ^a   Edwall, D ^a   Daraselia, M ^a   Almeida, L A ^b   Molstad, J ^b   Dinan, J H ^b   Markunas, J K ^b   Chen, Y ^c   Brill, G ^c   Dhar, N K ^c  

^a ROCKWELL SCIENTIFIC COMPANY   (United States)

^b NIGHT VISION AND ELECTRONIC SENSORS DIRECTORATE   (United States)

^c U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

Diode performance; HgCdTe on Si; Long wavelength infrared (LWIR); Molecular beam epitaxy (MBE)

Indexed keywords

CRYSTAL GROWTH; CRYSTAL LATTICES; CRYSTALLOGRAPHY; DISLOCATIONS (CRYSTALS); ELECTRON TUNNELING; ETCHING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HETEROJUNCTIONS; INFRARED RADIATION; MOLECULAR BEAM EPITAXY; OPTICAL MICROSCOPY; SILICON WAFERS; X RAY DIFFRACTION;

BUFFER LAYERS; DIODE PERFORMANCE; HGCDTE-ON-SI; LONG WAVELENGTH INFRARED (LWIR);

DIODES;

EID: 3042790451     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-004-0042-9     Document Type: Conference Paper

References (18)

1. N.K. Dhar, P.R. Boyd, P.M. Armirtharaj, J.H. Dinan, and J.D. Benson, Proc. SPIE 2228, 44 (1994).
2. T.H. Myers, Y. Lo, R.N. Bicknell, and J.F. Schetzina, Appl. Phys. Lett. 42, 247 (1983).
3. P.S. Wijewarnasuriya et al., J. Electron. Mater. 27, 546 (1998).
4. N.K. Dhar, M. Zandian, J.G. Pasko, J.M. Arias, and J.H. Dinan, Appl. Phys Lett. 70, 1730 (1997).
5. T.J. de Lyon, D. Rajavel, S.M. Johnson, and C.A. Cockrum, Appl. Phys Lett. 66, 2119 (1995).
6. N.K. Dhar, P.R. Boyd, M. Martinka, J.H. Dinan, L.A. Almeida, and N. Goldsman, J. Electron. Mater. 29, 748 (2000).
7. P.J. Taylor, W.A. Jesser, M. Martinka, K.M. Singley, J.H. Dinan, R.T. Lareau, M.C. Wood, and W.W. Clark III, J. Vac. Sci. Technol. A 17, 1153 (1999).
8. N.K. Dhar, C.E.C. Wood, A. Gray, H.Y. Wei, L. Salamanca-Riba, and J.H. Dinan, J. Vac. Sci. Technol. B 14, 2366 (1996).
9. Y.P. Chen, G. Brill, and N.K. Dhar, J. Cryst. Growth 252, 270 (2003).
10. J. Bajaj, J.M. Arias, M. Zandian, D.D. Edwall, J.G. Pasko, L.O. Bubulac, and L.J. Kozlowski, J. Electron. Mater. 25, 1394 (1996).
11. P.S. Wijewarnasuriya, M. Zandian, D.B. Young, J. Waldrop, D.D. Edwall, W.V. McLevige, D. Lee, J. Arias, and A.I. D'Souza, J. Electron. Mater. 28, 649 (1999).
12. N.H. Karam, V. Haven, S.M. Vernon, N. El-Masry, E.H. Lingunis, and N. Haegal, J. Cryst. Growth 107, 129 (1991).
13. X.G. Zhang, P. Li, G. Zhao, D.W. Parent, F.C. Jain, and J.E. Ayers, J. Electron. Mater. 27, 1248 (1998).
14. X.G. Zhang, A. Rodriguez, P. Li, F.C. Jain, and J.E. Ayers, Appl. Phys Lett. 91, 3912 (2002).
15. X.G. Zhang, A. Rodriguez, X. Wang, P. Li, F.C. Jain, and J.E. Ayers, Appl. Phys Lett. 77, 2524 (2002).
16. K. Jowikowski and A. Rogalski, J. Electron. Mater. 29, 736 (2000).
17. R.S. List, J. Electron. Mater. 22, 1017 (1993).
18. S.M. Johnson, D.R. Rhiger, J.P. Rosenbeck, J.M. Peterson, S.M. Taylor, and M.E. Boyd, J. Vac. Sci. Technol. B 10 1499 (1992).