HgCdTe on Si: Present status and novel buffer layer concepts

Journal of Electronic Materials

Volumn 32, Issue 8, 2003, Pages 882-889

  Golding, T D ^a   Holland, O W ^a   Kim, M J ^a   Dinan, J H ^b   Almeida, L A ^b   Arias, J M ^c   Bajaj, J ^c   Shih, H D ^d   Kirk, W P ^e  

^a UNIVERSITY OF NORTH TEXAS   (United States)

^b NIGHT VISION AND ELECTRONIC SENSORS DIRECTORATE   (United States)

^c ROCKWELL SCIENTIFIC COMPANY   (United States)

^d DRS Sensors and Targeting Systems Inc   (United States)

^e The University of Texas at Arlington   (United States)

Author keywords

Buffer layers; HgCdTE; Si; Wafer bonding

Indexed keywords

DENSITY (OPTICAL); LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; MOS DEVICES; SILICON; SINGLE CRYSTALS; SUBSTRATES; SYNTHESIS (CHEMICAL);

BUFFER LAYER; INFRARED FOCAL PLANE ARRAYS; WAFER BONDING;

IMAGE SENSORS;

EID: 0042441975     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0205-0     Document Type: Article

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