Molecular beam epitaxy grown long wavelength infrared HgCdTe on Si detector performance

Journal of Electronic Materials

Volumn 34, Issue 6, 2005, Pages 832-838

  Cakmody, M ^a   Pasko, J G ^a   Edwall, D ^a   Bailey, R ^a   Arias, J ^a   Cabelli, S ^d   Bajaj, J ^a   Almeida, L A ^b   Dinan, J H ^b   Groenert, M ^b   Stoltz, A J ^b   Chen, Y ^c   Brill, G ^c   Dhar, N K ^c  

^a ROCKWELL SCIENTIFIC COMPANY   (United States)

^b US Army RDECOM CERDEC NVESD   (United States)

^c U S ARMY RESEARCH LABORATORY   (United States)

^d NONE

Author keywords

HgCdTe; MBE; Si substrates

Indexed keywords

DIFFUSION; DIODES; INFRARED DETECTORS; MOLECULAR BEAM EPITAXY; PHOTOCURRENTS; SEMICONDUCTING SILICON;

DEFECT DENSITY; FOCAL PLANE ARRAYS (FPA); HGCDTE; SI SUBSTRATES;

MERCURY COMPOUNDS;

EID: 21644468820     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0028-2     Document Type: Conference Paper

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