HgCdTe epilayers on GaAs: Growth and devices

Opto-Electronics Review

Volumn 11, Issue 2, 2003, Pages 99-111

  Varavin, V S ^a   Vasiliev, V V ^a   Dvoretsky, S A ^a   Mikhailov, N N ^a   Ovsyuk, V N ^a   Sidorov, Yu G ^a   Suslyakov, A O ^a   Yakushev, M V ^a   Aseev, A L ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

Ellipsometer; Focal plane arrays; Growth GaAs; Heterostructures; Infrared detectors; MBE; MCT; P n junctions; Photoconductors; Photodiodes; Si

Indexed keywords

ANNEALING; COMPOSITION; DISLOCATIONS (CRYSTALS); ELLIPSOMETRY; HETEROJUNCTIONS; INFRARED DETECTORS; MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; PHOTODIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SOLID SOLUTIONS; SUBSTRATES; ULTRAHIGH VACUUM;

EPILAYERS; FOCAL PLANE ARRAYS;

SEMICONDUCTOR MATERIALS;

EID: 0346335579     PISSN: 12303402     EISSN: 18963757     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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