MWIR detectors on HgCdTe grown by MBE on 3-inch diameter silicon substrates

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5564, Issue , 2004, Pages 113-122

  Lee, T S ^a   Zhao, J ^a   Chang, Y ^a   Ashokan, R ^a   Sivananthan, S ^a   Boieriu, P ^b   Chen, Y ^c   Brill, G ^c   Wijewarnasuriya, P S ^c   Dhar, N ^c  

^a UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

^b EPIR TECHNOLOGIES INC   (United States)

^c U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

Arsenic implantation; Dynamic impedance; HgCdTe; Mid wavelength infrared (MWIR); Minority carrier lifetime; Molecular beam epitaxy (MBE); Photovoltaic detector; Silicon substrate

Indexed keywords

ARSENIC IMPLANTATION; DYNAMIC IMPEDANCE; HGCDTE; MID WAVELENGTH INFRARED (MWIR); MINORITY CARRIER LIFETIME; PHOTOVOLTAIC DETECTORS; SILICON SUBSTRATE;

ANNEALING; ARSENIC; DIFFUSION; DOPING (ADDITIVES); ELLIPSOMETRY; ION IMPLANTATION; LOW ENERGY ELECTRON DIFFRACTION; MATHEMATICAL MODELS; MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; PASSIVATION;

HETEROJUNCTIONS;

EID: 20144373996     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.568012     Document Type: Conference Paper

References (8)

1. J. B. Varesi, R. E. Bornfreund, A. C. Childs, W. A. Radford, K. D. Maranowski, J. M. Peterson, S. M. Johnson, L. M. Giegerich, T. J. de Lyon and J. E. Jensen, J. Election. Mater. 30(6), 566(2001).
2. K. D. Maranowski, J. M. Peterson, S. M. Johnson, J. B. Varesi, A. C. Childs, R. E. Bornfreund, A. A. Buell, W. A. Radford, T. J. de Lyon and J. E. Jensen, J. Electron. Mater. 30(6), 619(2001).
3. G. Brill, S. Velicu, P. Boieriu, Y. Chen, N. K. Dhar, T. S. Lee, Y. Selamet, and S. Sivananthan, J. Electron. Mater. 30(6), 717(2001).
4. J. B. Varesi, A. A. Buell, R. E. Bornfreund, W. A. Radford, J. M. Peterson, K. D. Maranowski, S. M. Johnson, and D. F. King, J. Electron. Mater. 31(7), 815(2002).
5. T. J. de Lyon, J. E. Jensen, M. D. Gorwitz, C. A. Cockrum, S. M. Johnson, and G. M. Venzor, J. Electron. Mater. 28(6), 705(1999).
6. M.B.Reine, K.R.Maschhoff, S.P.Tobin, P.W.Norton, J.A.Mroczkowski, and E.E.Krueger, Semicond. Sci. Technol. 8, 788 (1993).
7. V. C. Lopes, A. J. Syllaios, and M. C. Chen, Semicond. Sci. Technol. 8, 824(1993).
8. P. S. Wijewarnasuriya, M. Zandian, D. D. Edwall, W. V. McLevige, C. A. Chen, J. G. Pasko, G. Hildebrandt, A. C. Chen, J. M. Arias, A. I. D'Douza, S. Rujirawat, and S. Sivananthan, J. Electron. Mater., 27(6), 546(1998).