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Volumn 42, Issue 4 B, 2003, Pages 1966-1970
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Scanning tunneling microscopy of initial nitridation processes on oxidized Si(100) surface with radical nitrogen
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Author keywords
Gate dielectrics; Nitrogen radical; Scanning tunneling microscopy; Silicon nitride; Silicon oxynitride
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Indexed keywords
AUGER ELECTRON SPECTROSCOPY;
DIELECTRIC MATERIALS;
ELECTRONIC DENSITY OF STATES;
MORPHOLOGY;
NITRIDING;
NITROGEN;
OXIDATION;
SCANNING TUNNELING MICROSCOPY;
SURFACE STRUCTURE;
SURFACE TREATMENT;
TEMPERATURE;
GATE DIELECTRICS;
INITIAL NITRIDATION;
NITRIDE ISLAND MORPHOLOGY;
SILICON OXYNITRIDE;
SEMICONDUCTING SILICON;
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EID: 0038010019
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.42.1966 Document Type: Article |
Times cited : (2)
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References (9)
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