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Volumn 42, Issue 4 B, 2003, Pages 1966-1970

Scanning tunneling microscopy of initial nitridation processes on oxidized Si(100) surface with radical nitrogen

Author keywords

Gate dielectrics; Nitrogen radical; Scanning tunneling microscopy; Silicon nitride; Silicon oxynitride

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; DIELECTRIC MATERIALS; ELECTRONIC DENSITY OF STATES; MORPHOLOGY; NITRIDING; NITROGEN; OXIDATION; SCANNING TUNNELING MICROSCOPY; SURFACE STRUCTURE; SURFACE TREATMENT; TEMPERATURE;

EID: 0038010019     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.1966     Document Type: Article
Times cited : (2)

References (9)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.